Hot Electron Transistors Using Si/CoSi2
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Epitaxially grown base transistor for high-speed operationIEEE Electron Device Letters, 1987
- Room-temperature operation of hot-electron transistorsApplied Physics Letters, 1987
- Nonequilibrium electron transport in bipolar devicesApplied Physics Letters, 1987
- Study of ballistic transport in Si-CoSi2-Si metal base transistorsApplied Physics Letters, 1986
- ‘‘Ballistic’’ injection devices in semiconductorsApplied Physics Letters, 1986
- Control of a natural permeable CoSi2 base transistorApplied Physics Letters, 1986
- Transistor effect in monolithic Si/CoSi 2 /Si epitaxial structuresElectronics Letters, 1984