Epitaxial Growth of Ti1- xAl xN Buffer Layer for a Ferroelectric (Ba, Sr)TiO3 Capacitor on Si Substrate

Abstract
Epitaxial titanium aluminum nitride, Ti1-x Al x N(100) (0≦x2 + ion beam irradiation with 100 eV energy and Ti and Al simultaneous evaporation. The epitaxial relationship was confirmed to be Ti1-x Al x N(100)//Si(100), Ti1-x Al x N//Si by X-ray diffraction (XRD) and in situ reflection high-energy electron diffraction (RHEED). Although the electrical resistivity increased exponentially with x, the values remained on the order of 10-4 Ω·cm. Using the Ti1-x Al x N buffer layer, we have successfully fabricated a capacitor with an epitaxial (Ba, Sr)TiO3 film on a Si substrate.