Oxidation kinetics of TiN thin films
- 1 November 1981
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (11) , 6659-6664
- https://doi.org/10.1063/1.328659
Abstract
We have investigated the oxidation kinetics of TiN thin films in dry O2 in view of a possible application of TiN as material for gate electrodes and interconnections in large‐scale integrated circuits. We found that in the temperature range of 500 to 650 °C the oxidation is thermally activated with an activation energy of 2.05±0.05 eV. Thereby the diffusion of oxygen through the oxide is the rate‐limiting process. Analysis with x rays indicates that dry oxidation transforms TiN to the rutile form of TiO2. Films of TiO2 formed in such a manner are found to be semi‐insulating with resistivities in the order of 106 Ω cm and at higher applied electric fields the injection of space‐charge–limited currents is observed.This publication has 15 references indexed in Scilit:
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