STM study on the interactions ofC70with the Si(100)2×1 surface

We have conducted a study of the adsorption, thin-film growth, and the reaction of ${\mathrm{C}}_{70}$ on the Si(100)2×1 surface. It is found that the crystalline thin film can be grown with good quality by keeping the substrate at approximately 120 ° C during deposition. ${\mathrm{C}}_{70}$’s above the first layer can desorb at temperatures above approximately 250 °C, which is similar to the situation in the bulk phase, but the first layer of the ${\mathrm{C}}_{70}$ film which is directly bonded to the Si(100) surface does not desorb or decompose upon heating to 1000 °C. It reacts with the Si(100) substrate at temperatures above 1000 °C to form the SiC(100)3×2 islands. The reaction products can finally desorb at temperatures above 1300 °C, resulting in surface roughening.