Initial growth of Bi films on a Si(111) substrate: Two phases of √3 × √3 low-energy-electron-diffraction pattern and their geometric structures
- 15 August 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (7) , 3471-3474
- https://doi.org/10.1103/physrevb.44.3471
Abstract
The ordering of Bi on a Si(111)-7×7 surface was studied as a function of overlayer coverage and deposition conditions using low-energy-electron diffraction (LEED) and Auger electron spectroscopy. We observed a one-third-monolayer and a saturated one-monolayer phase. Both phases displayed identical √3 × √3- R30° LEED symmetries. LEED intensity data were used to differentiate between the two phases and to determine a quantitative atomic geometry via a thorough dynamical LEED analysis.Keywords
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