p+/N GaAs-AlGaAs heterostructures grown by gas source MBE using gaseous p- and n-type dopant sources
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 559-563
- https://doi.org/10.1016/0022-0248(91)91039-d
Abstract
No abstract availableKeywords
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