High-efficiency Ku-band HBT MMIC power amplifier
- 1 November 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (11) , 584-586
- https://doi.org/10.1109/55.192847
Abstract
A Ku-band monolithic HBT power amplifier was developed using a metal-organic chemical vapor deposition (MOCVD)-grown AlGaAs/GaAs heterojunction bipolar transistor (HBT) operating in common-emitter mode. At a 7.5 V collector bias, the amplifier produced 0.5 W CW output power with 5.0 dB gain and 42% power-added efficiency in the 15-16 GHz band. When operated at a single frequency (15 GHz), 0.66 W CW output power and 5.2 dB of gain were achieved with 43% PAE.Keywords
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