Ultrafast dynamics of interfacial electric fields in semiconductor heterostructures monitored by pump-probe second-harmonic generation
- 4 November 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (20) , 3717-3719
- https://doi.org/10.1063/1.1521573
Abstract
We report measurements of the ultrafast dynamics of interfacial electric fields in semiconductor multilayers using pump-probe second-harmonic generation (SHG). A pump beam was tuned to excite carriers in all the layers in GaAs/GaSb and GaAs/GaSb/InAs heterostructures. The resulting carrier dynamics manifests itself via electric fields created by charge separation due to carrier redistribution at the interfaces. The evolution of interfacial fields is monitored by a probe beam through an eletric-field-induced SHG signal. We distinguish between several stages of dynamics originating from redistribution of carriers between the layers. We also find a strong enhancement of the induced electric field caused by hybridization of the conduction and valence bands at the GaSb/InAs interface.Keywords
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