Growth and properties of single crystalline GaN substrates and homoepitaxial layers
- 28 February 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 44 (1-3) , 407-413
- https://doi.org/10.1016/s0921-5107(96)01730-8
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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