Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges
- 30 June 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (6) , 507-511
- https://doi.org/10.1016/0038-1101(89)90035-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A modification to the Fowler-Nordheim tunneling current calculation for thin MOS structuresSolid-State Electronics, 1988
- High-field and current-induced positive charge in thermal SiO2 layersJournal of Applied Physics, 1985
- Creation and termination of substrate deep depletion in thin oxide MOS Capacitors by charge tunnelingIEEE Electron Device Letters, 1983
- Positive and negative charging of thermally grown SiO2 induced by Fowler-Nordheim emissionJournal of Applied Physics, 1981
- Effect of substrate generation current on oxide I-V measurement on p-type MOS structuresSolid-State Electronics, 1979
- On the establishment of an inversion layer in p- and n-type silicon substrates under conditions of high oxide fieldsApplied Physics Letters, 1977
- Tunneling of electrons from Si into thermally grown SiO2Solid-State Electronics, 1977
- Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage charactersitcs of MOS structuresJournal of Applied Physics, 1976
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969