Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD
- 15 October 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 19 (21) , 1744-1746
- https://doi.org/10.1109/lpt.2007.906052
Abstract
We report high-performance GaN ultraviolet (UV) p-i-n avalanche photodiodes (APDs) fabricated on bulk GaN substrates. The fabricated GaN p-i-n diodes demonstrated optical gains > 104 and low dark current densities operating at wavelengths from 280 to 360 nm. The result is among the highest III-N-based APD gains at the deep UV wavelength of 280 nm reported to date.Keywords
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