Demonstration of ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes

19 December 2005

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters

Vol. 18 (1) , 136-138
https://doi.org/10.1109/lpt.2005.860384

Abstract

We report ultraviolet separate absorption and multiplication 4H-SiC avalanche photodiodes. An external quantum efficiency of 83% (187 mA/W) at 278 nm, corresponding to unity gain after reach-through was achieved. A gain higher than 1000 was demonstrated without edge breakdown.

Keywords

This publication has 8 references indexed in Scilit:

Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain
IEEE Journal of Quantum Electronics, 2005
Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications
MRS Proceedings, 2004
Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes
IEEE Photonics Technology Letters, 2002
Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode
IEEE Transactions on Electron Devices, 2002
A Novel Technology for the Formation of a Very Small Bevel Angle for Edge Termination
Materials Science Forum, 2002
4H-SiC visible blind UV avalanche photodiode
Electronics Letters, 1999
Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å
Journal of Applied Physics, 1998
Ionization rates and critical fields in 4H silicon carbide
Applied Physics Letters, 1997