Spatial nonuniformity of 4H-SiC avalanche photodiodes at high gain
- 19 September 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 41 (10) , 1213-1216
- https://doi.org/10.1109/jqe.2005.854132
Abstract
We report spatial nonuniformity of responsivity of 4H-SiC avalanche photodiodes at high gain (M > 1000) that results from variation in the doping density. Two-dimensional raster scans show a steady decline laterally across the device. The direction in which the spatial response decreases is the same as that of increasing breakdown voltage on the wafer.Keywords
This publication has 11 references indexed in Scilit:
- Study of reverse dark current in 4H-SiC avalanche photodiodesIEEE Journal of Quantum Electronics, 2005
- Minority carrier diffusion length measurements in 6H–SiCJournal of Applied Physics, 2005
- Edge Breakdown in 4H-SiC Avalanche PhotodiodesIEEE Journal of Quantum Electronics, 2004
- Nonlocal effects in thin 4H-SiC UV avalanche photodiodesIEEE Transactions on Electron Devices, 2003
- Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodesIEEE Photonics Technology Letters, 2002
- Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche RegimeMaterials Science Forum, 2002
- 4H-SiC visible blind UV avalanche photodiodeElectronics Letters, 1999
- Absorption coefficient of 4H silicon carbide from 3900 to 3250 ÅJournal of Applied Physics, 1998
- Study of avalanche breakdown and impact ionization in 4H silicon carbideJournal of Electronic Materials, 1998
- Ionization rates and critical fields in 4H silicon carbideApplied Physics Letters, 1997