Edge Breakdown in 4H-SiC Avalanche Photodiodes
- 8 March 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 40 (3) , 321-324
- https://doi.org/10.1109/jqe.2003.823033
Abstract
We report suppression of edge breakdown in mesa-structure SiC avalanche photodiodes (APDs) by employing a 10/spl deg/ sidewall bevel. These devices exhibit low dark currents, <10 pA for a 160-/spl mu/m-diameter device, at the onset of avalanche gain. Two-dimensional raster scans of both beveled and nonbeveled devices, fabricated from the same wafer, show the photocurrent as a function of position and illustrate the spatial properties of avalanche gain in SiC APDs.Keywords
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