Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications
- 1 January 2004
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC DiodesMaterials Science Forum, 2001
- Electrical Impact of SiC Structural Crystal Defects on High Electric Field DevicesMaterials Science Forum, 2000
- Status of Large Diameter SiC Crystal Growth for Electronic and Optical ApplicationsMaterials Science Forum, 2000
- Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbideProceedings of the IEEE, 1991