GaN avalanche photodiodes
- 14 February 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (7) , 924-926
- https://doi.org/10.1063/1.125631
Abstract
We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current–voltage characteristics indicate a multiplication of >25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is ⩾3 MV/cm. Small-area devices exhibit stable gain with no evidence of microplasmas.Keywords
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