Growth of low resistivity p -type GaN bymetal organic chemical vapour deposition
- 6 November 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (23) , 1987-1989
- https://doi.org/10.1049/el:19971257
Abstract
Mg-doped GaN epitaxial layers were grown on (0001) sapphire by metal organic chemical vapour deposition and were characterised by room-temperature and variable-temperature Hall-effect measurements. The authors report an in-situ Mg acceptor activation procedure which occurs in a N2 ambient during the post-growth cool-down cycle. GaN:Mg films with a wide range of free-hole concentrations and electrical resistivities have been grown by varying the Mg precursor molar flow rate, the growth pressure, and the growth temperature. The highest 300 K free hole concentrations achieved were p ≃ 2.2 × 1018 cm–3 with mobilities μp ≃ 2.2 cm2/Vs.Keywords
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