Effect of single-electron interface trapping in decanano MOSFETs: A 3D atomistic simulation study

This publication has 10 references indexed in Scilit:

• Random dopant induced threshold voltage lowering and fluctuations in sub 50 nm MOSFETs: a statistical 3D `atomistic' simulation study
  Nanotechnology, 1999
• Random telegraph signal: An atomic probe of the local current in field-effect transistors
  Journal of Applied Physics, 1998
• Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study
  IEEE Transactions on Electron Devices, 1998
• Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal–oxide–semiconductor field-effect transistors
  Journal of Applied Physics, 1997
• The gate bias and geometry dependence of random telegraph signal amplitudes [MOSFET]
  IEEE Electron Device Letters, 1997
• Random telegraph signals in deep submicron n-MOSFET's
  IEEE Transactions on Electron Devices, 1994
• The impact of device scaling on the current fluctuations in MOSFET's
  IEEE Transactions on Electron Devices, 1994
• Explaining the amplitude of RTS noise in submicrometer MOSFETs
  IEEE Transactions on Electron Devices, 1992
• 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors
  Applied Physics Letters, 1985
• Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
  Physical Review Letters, 1984