Direct observation of defects in Si-doped and Ge-doped Ga0.9Al0.1As epitaxial layers by transmission electron microscopy
- 1 April 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 38 (1) , 85-92
- https://doi.org/10.1016/0022-0248(77)90377-3
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Defect structure of degraded GaAlAs-GaAs double heterojunction lasersPhilosophical Magazine, 1975
- Growth of Dark Lines from Crystal Defects in GaAs-GaAlAs Double Heterostructure CrystalsJapanese Journal of Applied Physics, 1974
- Lasing Characteristics in a Degraded GaAs–AlxGa1-xAs Double Heterostructure LaserJapanese Journal of Applied Physics, 1974
- Measurement of minority carrier lifetime during gradual degradation of GaAs-Ga1-xAlxAs double- heterostructure lasersIEEE Journal of Quantum Electronics, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971
- Preparation of [100]-Oriented Foils of GaAs for Transmission Electron MicroscopyJournal of Applied Physics, 1967
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- Electron Microscopic Images of Single and Intersecting Stacking Faults in Thick Foils. Part I: Single FaultsPhysica Status Solidi (b), 1963
- Multiplication Processes for Slow Moving DislocationsPhysical Review B, 1950