Epitaxial growth of Si by ArF laser-excited supersonic free jets of Si2H6
- 20 December 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (25) , 3473-3475
- https://doi.org/10.1063/1.110124
Abstract
Epitaxial growth processes of Si from ArF laser‐excited Si2H6 supersonic free jets have been investigated using reflection high‐energy electron diffraction, growth rate, and atomic force microscopy measurements. Layer‐by‐layer epitaxial growth was observed at substrate temperature Ts=670 °C regardless of the laser excitation. However, it was found that island growth was predominant at Ts=550 °C without the laser excitation, while layer‐by‐layer growth occurred by using the ArF laser‐excited Si2H6 jet probably due to an enhancement of surface reactions induced by precursor species obtained from laser‐excited Si2H6 .Keywords
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