Gallium and nitrogen ion implantation in MOVPE-grown ZnSe/GaAs
- 1 April 1993
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 185 (1-4) , 174-178
- https://doi.org/10.1016/0921-4526(93)90234-w
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Optical analysis of metalorganic vapor phase epitaxy grown ZnS/ZnSe/GaAs(100) heterostructures: Carrier diffusion and interface sharpnessJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Li+ ion implantation into ZnS epitaxial layers grown by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1992
- Reduced incorporation of unintentional impurities and intrinsic defects in ZnSe and ZnS grown by MOVPEJournal of Crystal Growth, 1992
- Blue-green laser diodesApplied Physics Letters, 1991
- High quality over-epilayer growth of ZnSe on Li+-implanted ZnSe epilayers by atmospheric pressure MOVPEJournal of Crystal Growth, 1991
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990
- Optical Properties of ZnSe Epilayers and FilmsPhysica Status Solidi (a), 1990
- Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion ImplantationJapanese Journal of Applied Physics, 1989
- Examination of models for Zn diffusion in GaAsJournal of Applied Physics, 1983