Improvements in the theory of growth of LPE layers of GaAs and interpretation of recent experiments
- 1 November 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 50 (3) , 707-719
- https://doi.org/10.1016/0022-0248(80)90017-2
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- GaAs LPE growth and its application to FETJournal of Crystal Growth, 1978
- Continuous Growth of LPE Double Layers for GaAs FETJapanese Journal of Applied Physics, 1978
- An isothermal etchback-regrowth method for high-efficiency Ga1−xAlxAs-GaAs solar cellsApplied Physics Letters, 1977
- Dependence of GaAs LPE layer thickness on growth temperatureJournal of Crystal Growth, 1976
- Electric current controlled growth and doping modulation in GaAs liquid phase epitaxyJournal of Crystal Growth, 1975
- Liquid-phase epitaxial growth of thin GaAs layers from supercooled solutionsApplied Physics Letters, 1975
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- LPE GaAs for microwave applicationsJournal of Crystal Growth, 1974
- Steady-state LPE growth of GaAsJournal of Crystal Growth, 1974
- High peak-power LSA operation from epitaxial GaAsIEEE Transactions on Electron Devices, 1970