On the dissipation of energy by hot electrons in SiO2
- 14 December 1990
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 23 (12) , 1576-1581
- https://doi.org/10.1088/0022-3727/23/12/014
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Direct measurement of the energy distribution of hot electrons in silicon dioxideJournal of Applied Physics, 1985
- Theory of high-field electron transport in silicon dioxidePhysical Review B, 1985
- Electron heating in silicon dioxide and off-stoichiometric silicon dioxide filmsJournal of Applied Physics, 1985
- The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interfaceJournal of Applied Physics, 1985
- Strong Electric Field Heating of Conduction-Band Electrons in SiPhysical Review Letters, 1984
- High field current induced-positive charge transients in SiO2Journal of Applied Physics, 1983
- The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materialsReviews of Modern Physics, 1983
- Electron trapping in SiO2 at 295 and 77 °KJournal of Applied Physics, 1979
- Velocity Acquired by an Electron in a Finite Electric Field in a Polar CrystalPhysical Review B, 1970
- Calculation of steady state distribution functions by exploiting stabilityPhysics Letters A, 1968