Growth and properties of diamond films prepared by microwave plasma chemical vapour deposition using different oxygen-containing source gases
- 1 August 1991
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 47 (1-3) , 13-21
- https://doi.org/10.1016/0257-8972(91)90263-v
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Internal stress and elasticity of synthetic diamond filmsApplied Physics Letters, 1990
- Effects of oxygen on diamond growthApplied Physics Letters, 1989
- Effect of oxygen addition on microwave plasma CVD of diamond from CH4-H2 mixtureMaterials Research Bulletin, 1989
- Chemical vapour deposition of a diamond coating onto a tungsten carbide tool using ethanolSurface and Coatings Technology, 1988
- Diamond Synthesis by the Microwave Plasma CVD Method Using a Mixture of Carbon Monoxide and Hydrogen Gas (I)Chemistry Letters, 1988
- Diamond crystal growth by plasma chemical vapor depositionJournal of Applied Physics, 1988
- Diamond synthesis from methane-hydrogen-water mixed gas using a microwave plasmaJournal of Materials Science, 1988
- Stresses and deformation processes in thin films on substratesCritical Reviews in Solid State and Materials Sciences, 1988
- Effects of Oxygen on CVD Diamond SynthesisJapanese Journal of Applied Physics, 1987
- Synthesis of Diamond Thin Films by Thermal CVD Using Organic CompoundsJapanese Journal of Applied Physics, 1986