Diffusion in strained Si(Ge)
- 18 April 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 72 (16) , 2585-2588
- https://doi.org/10.1103/physrevlett.72.2585
Abstract
Experiments on Si-rich SiGe layers show an exponential increase in Ge diffusion and an exponential decrease in B diffusion as a function of compressive strain, indicating a linear dependence of activation energy on strain. The effect arises from the structural relaxation of the lattice around the defect mediating diffusion (inward for a vacancy, outward for an interstitial). We infer the mechanisms of Ge and B diffusion in strain-free and compressively strained Si(Ge) at T<1030 °C, and draw some general conclusions on strain-modified diffusion in crystalline solids.Keywords
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