Germanium diffusion and strain relaxation in Si/Si1−xGex/Si structures
- 30 December 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 183 (1-2) , 183-190
- https://doi.org/10.1016/0040-6090(89)90443-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in SiApplied Physics Letters, 1989
- Strain measurements and thermal stability of Si1−xGex/Si strained layersJournal of Materials Research, 1989
- Determination of concentration-dependent diffusion coefficients from thin film/substrate interdiffusionPhysica Status Solidi (a), 1988
- Investigations by SIMS of the bulk impurity diffusion of Ge in SiPhilosophical Magazine A, 1984
- Diffusion of Ge in SiGe alloysPhysical Review B, 1974