Heteroepitaxial growth of InN on AlN-nucleated (00.1) sapphire by ultrahigh vacuum electron cyclotron resonance-assisted reactive magnetron sputtering
- 23 May 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (21) , 2864-2866
- https://doi.org/10.1063/1.111451
Abstract
A novel deposition technique, ultrahigh vacuum electron cyclotron resonance (ECR)‐assisted reactive magnetron sputtering, has been developed for the preparation of group IIIA nitride thin films. In initial experiments, thin films of the semiconductor InN have been deposited on AlN‐seeded (00.1) sapphire substrates, and the properties of these films studied as a function of growth temperature. Comparison to InN thin films grown by conventional reactive magnetron sputtering shows enhanced Hall mobilities (from about 50 to over 80 cm2/V s), a decreased carrier concentration (by about a factor of 2), an increased optical band gap, and an apparent reduction in homogeneous strain that is in part due to film relaxation induced by the ECR beam and in part to enhanced nitrogen content and more nearly stoichiometric films.Keywords
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