Anisotropic laser etching of oxidized (100) silicon
- 16 January 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (3) , 225-227
- https://doi.org/10.1063/1.101443
Abstract
Laser-induced anisotropic chemical etching of silicon is reported, by using a 488 nm Ar+ laser in direct write mode and high-pressure Cl2 process gas. Surface modifications directly comparable with conventional anisotropic wet etching methods have been obtained. A main role in the process is played by the masking effect due to a thin uniform SiO2 film grown on the Si substrate. An explanation of the etching mechanism is attempted.Keywords
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