Luminescence up-conversion by auger process at InP-AlInAs type II interfaces
- 30 June 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (4-6) , 1041-1044
- https://doi.org/10.1016/0038-1101(94)90353-0
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Auger recombination in intrinsic GaAsApplied Physics Letters, 1993
- Observation of laser emission in an InP-AlInAs type II superlatticeApplied Physics Letters, 1992
- Comparison of Auger recombination in GaInAs-AlInAs multiple quantum well structure and in bulk GaInAsIEEE Journal of Quantum Electronics, 1986
- Auger recombination in direct-gap semiconductors: band-structure effectsJournal of Physics C: Solid State Physics, 1983
- Auger recombination in GaAs and GaSbPhysical Review B, 1977