Über die selektive anodische oxydation von n-Silizium
- 1 December 1978
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 55 (3) , 427-433
- https://doi.org/10.1016/0040-6090(78)90160-8
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Über die selektive anodische oxydation von n-SiThin Solid Films, 1977
- Die abtragung dünner schichten von P- und B-implantiertem Silizium mit Hilfe der anodischen OxydationThin Solid Films, 1976
- A theoretical investigation on the generation current in silicon p-n junctions under reverse biasSolid-State Electronics, 1972
- Anodic Dissolution of N+ SiliconJournal of the Electrochemical Society, 1971
- Oberflächenleitung und Oberflächenrekombination an der Grenze Silicium-ElektrolytZeitschrift für Naturforschung A, 1961
- Saturation Currents in Germanium and Silicon ElectrodesJournal of the Electrochemical Society, 1958
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952