Die abtragung dünner schichten von P- und B-implantiertem Silizium mit Hilfe der anodischen Oxydation

This publication has 4 references indexed in Scilit:

• Anodic oxidation as sectioning technique for the analysis of impurity concentration profiles in silicon
  Thin Solid Films, 1971
• Technique used in Hall effect analysis of ion implanted Si and Ge
  Solid-State Electronics, 1970
• A refined oxidation-stripping technique of thin n-type Si films
  Radiation Effects, 1969
• A simple non-destructive method of measuring the thickness of transparent thin films between 10 and 600 nm
  Solid-State Electronics, 1968