A comparison of planar doped barrier diode performance versus Schottky diode performance in a single balanced, MIC mixer with low LO drive
- 1 June 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 43 (6) , 1241-1246
- https://doi.org/10.1109/22.390178
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Millimeter-wave deembedding using the extended TRL (ETRL) approachPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Planar Doped Barrier Diodes Offering Improved Microwave Burnout Performance over Si and GaAs Schottky DiodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1989
- Subharmonic Planar Doped Barrier Mixer Conversion Loss CharacteristicsIEEE Transactions on Microwave Theory and Techniques, 1983
- Planar-doped barriers in GaAs by molecular beam epitaxyElectronics Letters, 1980