Impurity NMR Study of the Acceptor Band in Si(B)

We report results of ${}^{11}\mathrm{B}$ impurity species and ${}^{29}\mathrm{Si}$ host species nuclear magnetic resonance measurements in heavily doped Si(B). The data cover a wide temperature range between 100 and 500 K and carrier concentrations from $3.4\times {10}^{18}$ to $5\times {10}^{19}{\mathrm{cm}}^{-3\mathrm{}}$. Strongly temperature-dependent resonance shifts are analyzed to obtain values $H_{\mathrm{hf}}^{\mathrm{B}}\approx 450\mathrm{O}\mathrm{e}/{\mu }_{\beta }$ and $H_{\mathrm{hf}}^{\mathrm{Si}}\approx 7\mathrm{Oe}/{\mu }_{\beta }$ for the ${}^{11}\mathrm{B}$ and ${}^{29}\mathrm{Si}$ impurity state hyperfine couplings, respectively. Spin-lattice relaxation rates, line broadening, and loss of NMR intensity at lower temperatures are interpreted in terms of progressive localization and are related to the observed decrease of mobility at low temperatures.