Rapid Thermal Processing of Implanted GaN up to 1500°C
Open Access
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
- Vol. 4 (S1) , 671-677
- https://doi.org/10.1557/s1092578300003239
Abstract
GaN implanted with donor(Si, S, Se, Te) or acceptor (Be, Mg, C) species was annealed at 900-1500 °C using AlN encapsulation. No redistribution was measured by SIMS for any of the dopants and effective diffusion coefficients are ≤2 × 10−13 cm2. s−1 at 1400 °C, except Be, which displays damage-enhanced diffusion at 900 °C and is immobile once the point defect concentration is removed. Activation efficiency of ∼90% is obtained for Si at 1400 °C. TEM of the implanted material shows a strong reduction in lattice disorder at 1400-1500 °C compared to previous results at 1100 °C. There is minimal interaction of the sputtered AlN with GaN under our conditions, and it is readily removed selectively with KOH.Keywords
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