Reflection high energy electron diffraction measurements of molecular beam epitaxially grown GaAs and InGaAs on GaAs(111)
- 1 August 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 231 (1-2) , 1-7
- https://doi.org/10.1016/0040-6090(93)90700-y
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Lateral p-n junctions on GaAs(111)A substrates patterned with equilateral trianglesSurface Science, 1992
- Dynamics of reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substratesApplied Physics Letters, 1990
- Strain-induced two-dimensional electron gas in [111] growth-axis strained-layer structuresApplied Physics Letters, 1990
- Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructureApplied Physics Letters, 1990
- Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- Effects of compressive uniaxial stress on the electronic structure of GaAs-quantum wellsPhysical Review B, 1987
- Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B SubstratesJapanese Journal of Applied Physics, 1987
- Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructuresApplied Physics Letters, 1985
- Surface stoichiometry and structure of GaAsSurface Science, 1974
- Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface StructuresJournal of Applied Physics, 1970