Mechanism for ion-induced mixing of GaAs-AlGaAs interfaces by rapid thermal annealing
- 24 October 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (17) , 1635-1637
- https://doi.org/10.1063/1.99935
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Kinetics of silicon-induced mixing of AlAs-GaAs superlatticesApplied Physics Letters, 1987
- Destruction mechanism of III-V compound quantum well structures due to impurity diffusionJournal of Applied Physics, 1987
- Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wellsApplied Physics Letters, 1986
- Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs-GaxAl1−xAs interfacesApplied Physics Letters, 1986
- Intermixing of an AlAs-GaAs superlattice by Zn diffusionJournal of Applied Physics, 1982
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981
- Interdiffusion between GaAs and AlAsApplied Physics Letters, 1976
- Properties of vacancy defects in GaAs single crystalsJournal of Applied Physics, 1975
- Calculations of point defect concentrations and nonstoichiometry in GaAsJournal of Physics and Chemistry of Solids, 1971
- Annealing and Arsenic Overpressure Experiments on Defects in Gallium ArsenideJournal of Applied Physics, 1966