Growth of CoSi2 on CaF2/Si (111) Heterostructures
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
In order to produce an epitaxial metal/insulator/semiconductor structure we investigated the growth of CoSi2 on CaF2/Si (111) heterostructures. We demonstrate the possibility to grow epitaxial CoSi2 on CaF2 films by utilization of the template technique. The fabrication of these structures will be presented. The properties of such heterostructures were determined by means of RHEED, LEED, AES, SIMS, RBS and resistivity measurements.Keywords
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