Energy-band structure of (AlAs)(GaAs) superlattices
- 1 March 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (5) , 1729-1732
- https://doi.org/10.1063/1.339909
Abstract
The energy-band structure of (AlAs) (GaAs) short-period superlattices (SLs) has been investigated by using photoluminescence and photoluminescence excitation spectroscopy. In the indirect transition region, both direct and indirect transitions are simultaneously observed and the band structure is elucidated. Indirect-direct crossover occurs in the region of 15–18 Å GaAs thickness for SLs with 10-Å AlAs thickness.This publication has 6 references indexed in Scilit:
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