Low-temperature photoluminescence from bulk CdTe and Cd0.967Zn0.033Te

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Abstract
Low‐temperature photoluminescence spectroscopy has been performed on bulk CdTe and Cd1−xZnxTe (x=0.033) in the emission region near the band‐gap energy. A method to distinguish the free‐exciton recombination band from other close‐lying emissions in these materials is described. From the identification of the free‐exciton emission, the band‐gap energy was then determined. Radiative emission bands involving exciton–phonon quasiparticles were clearly observed above the band‐gap energy at temperatures up to 40 K. The sample variation in the above‐band‐gap emission indicates that the exciton–phonon quasiparticle energy depends on the presence of donors and/or acceptors. In addition, the above‐band‐gap emission related to (e,h) transitions between the conduction band and valence band in these materials is observed.