Transmission line noise from standard and proton-implanted Si
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (0149645X) , 763-766
- https://doi.org/10.1109/mwsym.2001.967004
Abstract
We have measured the NF/sub min/ of transmission lines on 10/sup 6/ ohm-cm proton implanted Si, Si-on-Quartz, and standard Si with top isolation oxide. Transmission lines on proton implanted Si shows the lowest NF/sub min/ of less than 0.2 dB because of the low substrate loss due to the high resistivity. The proton implantation did not contribute to excess shot noise induced by carrier trapping and de-trapping because of the very small diffusion length to metal line.Keywords
This publication has 4 references indexed in Scilit:
- RF loss and crosstalk on extremely high resistivity (10 k-1 MΩ-cm) Si fabricated by ion implantationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The performance limiting factors as RF MOSFETs scale downPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Fabrication of very high resistivity Si with low loss and cross talkIEEE Electron Device Letters, 2000
- Picosecond photoresponse of carriers in Si ion-implanted SiApplied Physics Letters, 1996