High spectral response and photoluminescence of AlxGa1−xAs solar cell structures grown by metalorganic chemical vapor deposition (0.28≤x≤0.53)

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Abstract
Internal quantum efficiency (spectral response) data are presented for metalorganic chemical vapor deposition‐grown AlxGa1−xAs (0.28≤x≤0.53) solar cell structures. Quantum efficiencies as high as 90% are obtained for x=0.28, falling to ∼45% for x=0.53. Electron diffusion lengths are derived from these data by fitting to theoretical predictions. Photoluminescence data on the samples are also presented showing strong intensity (comparable to GaAs) for 0.28≤x≤0.35. Degradation in performance above x=0.38 is attributed to increased deep level densities and direct‐indirect band‐edge crossover effects.