Long-lived GaAlAs laser diodes with multiple quantum well active layers grown by organometallic vapor phase epitaxy
- 1 August 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (3) , 278-280
- https://doi.org/10.1063/1.94301
Abstract
Proton-defined stripe geometry GaAlAs laser diodes with multiple quantum well active layers grown by organometallic vapor phase epitaxy have been operated continuously at 5 mW/facet for over 1800 h at 70 °C and over 1100 h at 100 °C. With a 0.7-eV activation energy, these times extrapolate respectively to 11.7 and 47.9 years of continuous operation at 20 °C. In the present mode of degradation, we estimate that the mean time to double the initial operating current is greater than 138 years at 20 °C.Keywords
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