Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots
- 1 October 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (7) , 3789-3791
- https://doi.org/10.1063/1.346307
Abstract
Low-temperature photoluminescence and photoluminescence excitation experiments have been performed on lattice-matched InGaAs/InP quantum wells, wires, and dots grown by metalorganic vapor-phase epitaxy and processed by electron-beam lithography. An enhancement of the intrinsic photoluminescence mechanism is found with decreasing dimensionality.This publication has 12 references indexed in Scilit:
- Electron gas in semiconductor multiple quantum wires: Spatially indirect optical transitionsPhysical Review Letters, 1989
- Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAsApplied Physics Letters, 1989
- Strain-induced confinement of carriers to quantum wires and dots within an InGaAs-InP quantum wellApplied Physics Letters, 1989
- Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wiresApplied Physics Letters, 1989
- Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum ConfinementPhysical Review Letters, 1989
- Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structuresApplied Physics Letters, 1988
- Low-temperature photoluminescence from InGaAs/InP quantum wires and boxesApplied Physics Letters, 1987
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Optical spectroscopy of ultrasmall structures etched from quantum wellsApplied Physics Letters, 1986
- Spatial quantization in GaAs–AlGaAs multiple quantum dotsJournal of Vacuum Science & Technology B, 1986