Impact ionization rates for electrons and holes in Al0.48In0.52As
- 1 November 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (9) , 968-970
- https://doi.org/10.1063/1.95467
Abstract
The first measurement of the impact ionization rates for electrons and holes in Al0.48In0.52As is reported. Photomultiplication measurements in pin avalanche photodiodes give α/β≊2.5–3.0 in the electric field range 3.3×105 V/cm≤F≤4.3×105 V/cm. This material can therefore be used to implement a potentially high‐performance, long‐wavelength avalanche photodiode, with separate absorption and multiplication regions and a high‐low electric field profile (HI‐LO SAM APD).Keywords
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