New long wavelength Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode grown by molecular beam epitaxy
- 1 December 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (11) , 1040-1042
- https://doi.org/10.1063/1.94228
Abstract
We report the first Al0.48In0.52As/Ga0.47In0.53As long wavelength avalanche photodiode. The device, grown by molecular beam epitaxy, has high responsivities over a wide spectral range (0.85–1.7 μm). Avalanche gains of ≂27 at relatively low operating voltages (≲30 V) are observed. The band edge discontinuities of this heterojunction make these devices potentially faster than similar abrupt structures of InP/Ga0.47In0.53As. Fast response with a full width at half‐maximum of ≂250 ps and no tails are observed.Keywords
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