Vapor Deposition of Silicon Nitride on GaAs by SiCl4-NH3-N2 System
- 1 November 1967
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 6 (11)
- https://doi.org/10.1143/jjap.6.1345
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Preparation and Properties of Pyrolytic Silicon NitrideJournal of the Electrochemical Society, 1966
- Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1966
- Vapor Etching of GaAs Single Crystals with HCl GasJapanese Journal of Applied Physics, 1965
- Chemical vapour deposition promoted by r.f. dischargeSolid-State Electronics, 1965
- On the Preparation of the Nitrides of Aluminum and GalliumJournal of the Electrochemical Society, 1961