Temporal evolution of GaSb/GaAs quantum dot formation
- 13 August 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (7) , 1027-1029
- https://doi.org/10.1063/1.1394715
Abstract
The formation of GaSb quantum dots in a GaAs matrix in the Stranski–Krastanow growth mode under metalorganic chemical vapor deposition conditions is investigated. Transmission electron microscopical images and photoluminescence measurements show the islands to nucleate during the GaSb deposition and to grow subsequently by mass transfer from the two-dimensional wetting layer. The evolving surface morphology indicates local equilibria between quantum dots and the surrounding wetting layer regions.Keywords
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