Study of the effects of aging on the relaxation luminance in atomic layer epitaxy ZnS:Mn alternating-current thin-film electroluminescent devices

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Abstract
A study of the relaxation luminance peak and the electro-optical aging effects in atomic layer epitaxy (ALE) normally doped ZnS:Mn alternating-current thin-film electroluminescent (ACTFEL) devices is presented. The relaxation luminance occurs when the applied voltage goes to zero. The changes in the luminance versus time L(t), current versus time I(t), and characteristics of luminance versus voltage, as a function of aging are discussed in terms of a model which includes bulk traps, space charge, and shallow trap levels. This relaxation luminance peak observed in ALE devices provides a means of gaining insight into ACTFEL devices.