X-ray multiple diffraction as a tool for studying heteroepitaxial layers: II. Coherent, off-axis layers
- 30 November 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 60 (1) , 33-42
- https://doi.org/10.1016/0022-0248(82)90170-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972