A gallium arsenide double injection diode
- 31 December 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (12) , 1165-1173
- https://doi.org/10.1016/0038-1101(68)90007-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Filamentary Injection in Semi-Insulating SiliconJournal of Applied Physics, 1966
- EFFECT OF LIGHT ON POPULATION OF RECOMBINATION CENTERS IN STRUCTURES EXHIBITING DOUBLE INJECTIONApplied Physics Letters, 1965
- Comparative Anatomy of Models for Double Injection of Electrons and Holes into SolidsJournal of Applied Physics, 1964
- Effect of Shallow Trapping and the Thermal-Equilibrium Recombination Center Occupancy on Double-Injection Currents in InsulatorsPhysical Review B, 1964
- Double Injection in Deep-Lying Impurity SemiconductorsJournal of Applied Physics, 1964
- Behavior of lattice defects in GaAsJournal of Physics and Chemistry of Solids, 1964
- Current-controlled negative resistance in thin niobium oxide filmsProceedings of the IEEE, 1963
- Metal contact double injection in GaAsProceedings of the IEEE, 1963
- Double Injection in InsulatorsPhysical Review B, 1962